- Contact Person : Mr. zong guanjie
- Company Name : Runau Electronics (Yangzhou) Manufacturing Co., Ltd.
- Tel : 86-514-87218606
- Fax : 86-514-87253048
- Address : Jiangsu,yangzhou,Yangzhou guangling industrial park entrepreneurial road
- Country/Region : China
DIODE
ZP18000-WELDING DIODES
RunAu Electronics (YangZhou) Manufacturing Co;Ltd 200 - 400 VRRM; 18000 A avg
Features:
. All Diffused Structure
.High current density
. Very low on-state voltage drop
. metal case with ceramic insulator
. Ultra-low thermal resistance
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device Type | VRRM (1) | VRSM (2) |
ZP18000/02 | 200V | 300V |
ZP18000/04 | 400V | 450V |
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage | IRRM | 15 mA 80 mA (3) |
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1)Half sine, f=50Hz, Tj = -40 to +170oC.
(2)Half sine, 10 msec,Tj = -40 to +170oC.
(3) Maximum junction temperature:Tj = 170 oC.
(4) Parameters are defined below :
Conducting - on state
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Average value of on-state current | IF(AV) | 18000 | A | sine,180o Conduction angle,Tc =85oC | ||
RMS value of on-state current | IF(RMS) | 28200 | A | |||
Peak one cycle surge (non repetitive) current | IFSM | 135000 | A | 10.0 msec ,sine, 180o Conduction angle, Tj = 170 oC | ||
I2t | I2t | 91100000 | A2s | 10.0 msec, sine, Tj = 170 oC | ||
Peak on-state voltage | VFM | 1.08 0.97 | V | IFM =12000 A; 25 oC IFM =5000 A; 25 oC | ||
Threshold votage | VTO | 0.74 | V | Tj = 170 oC | ||
Slope resistance | rT | 0.016 | mΩ | Tj = 170 oC | ||
Reverse Recovery Current (4) | IRM(REC) | A | IFM = 1000 A; dIF/dt = 10 A/ms;Tjmax | |||
Reverse Recovery Charge (4) | Qrr | mC | IFM = 1000 A; dIF/dt = 10 A/ms;Tjmax | |||
Reverse Recovery Time (4) | tRR | ms |
THERMAL AND MECHANICAL CHARACTERISTICS
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Operating junction temperature range | Tj | -40 | +170 | oC | ||
Storage temperature | Tstg | -40 | +170 | oC | ||
Thermal resistance - junction to case | RQ (j-c) | 0.004 | oC/W | Double sided cooled | ||
Thermal resistance - case to sink | RQ (j-c) | 0.008 | oC/W | Single sided cooled | ||
Creepage distance on the surface | DS | 8 | mm | |||
Air breakdown distance | Da | 8 | mm | |||
Mounting force | F | 36 | 44 | kN | ||
Weight | W | 578 | g |
DIODE
