- Contact Person : Mr. zong guanjie
- Company Name : Runau Electronics (Yangzhou) Manufacturing Co., Ltd.
- Tel : 86-514-87218606
- Fax : 86-514-87253048
- Address : Jiangsu,yangzhou,Yangzhou guangling industrial park entrepreneurial road
- Country/Region : China
Diode
ZP12000A WELDING DIODES
RunAu Electronics (YangZhou) Manufacturing Co;Ltd 200 - 400 VRRM; 12000 A avg
Features:
. All Diffused Structure
.High current density
. Very low on-state voltage drop
. metal case with ceramic insulator
. Ultra-low thermal resistance
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
DeviceType | VRRM(1) | VRSM(2) |
ZP12000/02 | 200V | 300V |
ZP12000/04 | 400V | 450V |
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage | IRRM | 15 mA 50 mA (3) |
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1)Half sine, f=50Hz, Tj = -40 to +170oC.
(2)Half sine, 10 msec,Tj = -40 to +170oC.
(3) Maximum junction temperature:Tj = 170 oC.
(4) Parameters are defined below :
Conducting - on state
Parameter | Symbol | Max. | Units | Conditions |
Average value of on-state current | IF(AV) | 12000 | A | SINE,180o Conduction angle,Tc=85oC |
RMS value of on-state current | IF(RMS) | 18800 | A | |
Peak one cycle surge (non repetitive) current | IFSM | 85000 | A | 10.0 msec ,sine, 180o Conduction angle, Tj = 170 oC |
I2t | I2t | 36100000 | A2s | 10.0 msec, sine, Tj = 170 oC |
Peak on-state voltage | VFM | 1.02 1.00 | V | IFM =8000 A; 25 oC IFM =5000 A; 25 oC |
Threshold votage | VTO | 0.74 | V | Tj = 170 oC |
Slope resistance | rT | 0.019 | mΩ | Tj = 170 oC |
THERMAL AND MECHANICAL CHARACTERISTICS
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Operating junction temperature range | Tj | -40 | +170 | oC | ||
Storage temperature | Tstg | -40 | +170 | oC | ||
Thermal resistance - junction to case | RQ (j-c) | 0.006 | oC/W | Double sided cooled | ||
Thermal resistance - case to sink | RQ (j-c) | 0.012 | oC/W | Single sided cooled | ||
Creepage distance on the surface | DS | 4 | mm | |||
Air breakdown distance | Da | 4 | mm | |||
Mounting force | F | 25 | 30 | kN | ||
Weight | W | 205 | g |
Diode
